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IRFL214TR

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半導體

IRFL214TRPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半導體

IRFL214TRPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFL214TRPBF-BE3AB

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFM214B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFN214B

250VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFR214

2.2A,250V,2.000Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheyareadvancedpowerMOSFETsaredesignedforuseinapplicationssuchasswitchingregulators

Intersil

Intersil Corporation

IRFR214

PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=2.2A)

HEXFET?PowerMOSFET VDSS=250V RDS(on)=2.0Ω ID=2.2A

IRF

International Rectifier

IRFR214

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

VishayVishay Siliconix

威世科技威世科技半導體

IRFR214

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IRFL214TR

  • 功能描述：

    MOSFET N-Chan 250V 0.79 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
SOT-223
2500
只做原廠渠道 可追溯貨源
 詢價
IR
00+06+
SOT-223
2872
原裝進口無鉛現(xiàn)貨
 詢價
IR
24+
SOT-223
16200
新進庫存/原裝
 詢價
IR
24+
SOT-223
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
IOR
24+
SOT223
2987
絕對全新原裝現(xiàn)貨供應(yīng)!
 詢價
23+
原廠封裝
9888
專做原裝正品,假一罰百!
 詢價
IR
25+23+
SOT-223
27376
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
IR原裝
21+
SOT-223
12588
原裝正品,自己庫存 假一罰十
 詢價
IR
24+
SOT-223
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
IR
23+
SOT-223
30000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
更多IRFL214TR供應(yīng)商 更新時間2025-4-25 16:36:00

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