首頁>IRFIBC20GPBF>規(guī)格書詳情
IRFIBC20GPBF中文資料KERSEMI數(shù)據(jù)手冊PDF規(guī)格書
IRFIBC20GPBF規(guī)格書詳情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
FEATURES
? Isolated Package
? High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
? Sink to Lead Creepage Distance = 4.8 mm
? Dynamic dV/dt Rating
? Low Thermal Resistance
? Lead (Pb)-free Available
產(chǎn)品屬性
- 型號：
IRFIBC20GPBF
- 功能描述：
MOSFET N-Chan 600V 1.7 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2020+ |
TO-220F |
8000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IR |
NA |
8560 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
IR |
06+ |
TO-220F |
1200 |
詢價 | |||
IR |
21+ |
TO-220F |
8820 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
IR |
22+ |
NA |
4500 |
全新原裝品牌專營 |
詢價 | ||
IR |
23+ |
原廠封裝 |
9888 |
專做原裝正品,假一罰百! |
詢價 | ||
Vishay Siliconix |
21+ |
TO2203 Isolated Tab |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
VISHAY/威世 |
23+ |
TO-220 |
90000 |
一定原裝深圳現(xiàn)貨 |
詢價 | ||
IR |
23+ |
NA/ |
732 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
0728+ |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 |
