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IRFP9130

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-12A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP9130

P-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRFP9130

P-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRFP9130

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS9130

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFY9130

P-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFY9130C

P-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRFY9130C

POWERMOSFETTHRU-HOLE(TO-257AA)100V,P-CHANNELHEXFET?MOSFETTECHNOLOGY

PartNumberRDS(on)IDEyelets IRFY9130C0.3?-11.2ACeramic IRFY9130CM0.3?-11.2ACeramic HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon

IRF

International Rectifier

IRFY9130C

SimpleDriveRequirements

IRF

International Rectifier

IRFY9130CM

POWERMOSFETTHRU-HOLE(TO-257AA)100V,P-CHANNELHEXFET?MOSFETTECHNOLOGY

PartNumberRDS(on)IDEyelets IRFY9130C0.3?-11.2ACeramic IRFY9130CM0.3?-11.2ACeramic HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon

IRF

International Rectifier

IRFY9130CM

POWERMOSFETP-CHANNEL(BVdss=-100V,Rds(on)=0.3ohm,Id=-11.2A)

PartNumberRDS(on)IDEyelets IRFY9130C0.3?-11.2ACeramic IRFY9130CM0.3?-11.2ACeramic HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon

IRF

International Rectifier

IRFY9130M

P-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRH9130

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(T0-204AA)

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(T0-204AA) InternationalRectifier’sRADHardHEXFET?technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeenchar

IRF

International Rectifier

IRH9130

SimpleDriveRequirements

IRF

International Rectifier

IRHE9130

RADIATIONHARDENEDPOWERMOSFETSURFACEMOUNT(LCC-18)

IRF

International Rectifier

IRHE9130

SimpleDriveRequirements

IRF

International Rectifier

IRHF9130

TRANSISTORP-CHANNEL(BVdss=-100V,Rds(on)=0.30ohm,Id=-6.5A)

InternationalRectifier’sRAD-HardHEXFETTMtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.ThesedeviceshavebeencharacterizedforbothTotalDoseandSingleEventEffec

IRF

International Rectifier

IRHF9130

SimpleDriveRequirements

IRF

International Rectifier

IRHM9130

RADIATIONHARDENEDPOWERMOSFET/100V,P-CHANNEL

IRF

International Rectifier

IRHM9130

SimpleDriveRequirements

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFP9130

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    P-CHANNEL POWER MOSFETS

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO 247
161485
明嘉萊只做原裝正品現(xiàn)貨
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IR/VISHAY
23+
TO-247
10000
公司只做原裝正品
 詢價
IR
22+
TO-247
6000
十年配單,只做原裝
 詢價
IR/VISHAY
23+
TO-247
6000
原裝正品，支持實單
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IR/VISHAY
22+
TO-247
25000
只做原裝進口現(xiàn)貨,專注配單
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IR
2023+
TO-247
4675
全新原廠原裝產品、公司現(xiàn)貨銷售
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IR
23+
TO-247
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-247
7000
詢價
IR/VISHAY
24+
TO-247
12300
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
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IR
23+
TO-247
38000
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更多IRFP9130供應商 更新時間2025-1-8 19:09:00

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