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IRFR/U2405

Surface Mount (IRFR2405)

Description TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ●Surf

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR2405

PowerMOSFET(Vdss=55V,Rds(on)=0.016ohm,Id=56A??

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRFR2405

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR2405

SurfaceMount(IRFR2405)

Description TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ●Surf

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR2405LPBF

SurfaceMount(IRFR2405)

IRF

International Rectifier

IRFR2405PBF

HEXFETPowerMOSFET

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRFR2405PBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFR2405PBF

AdvancedProcessTechnology

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR2405PBF

AdvancedProcessTechnology

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

IRF

International Rectifier

IRFR2405PBF

SurfaceMount(IRFR2405)StraightLead(IRFU2405)AdvancedProcessTechnology

Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

KERSEMI

Kersemi Electronic Co., Ltd.

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
22+
6000
終端可免費(fèi)供樣,支持BOM配單
詢價(jià)
IR
23+
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
IR
23+
8000
只做原裝現(xiàn)貨
詢價(jià)
IR
23+
7000
詢價(jià)
IR
23+
TO-251/TO-25
9896
詢價(jià)
更多IRFR/U2405供應(yīng)商 更新時(shí)間2025-5-1 10:00:00