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IRFR4105TRLPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFR4105TRLPBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Ultra Low On-Resistance
● Surface Mount (IRFR4105)
● Straight Lead (IRFU4105)
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFR4105TRLPBF
- 功能描述：
MOSFET MOSFT 55V 25A 45mOhm 22.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
21+ |
DPAK |
6820 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
IR |
2020+ |
TO252 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
TO-252 |
9908 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價(jià) | ||
Infineon/英飛凌 |
23+ |
DPAK |
25630 |
原裝正品 |
詢價(jià) | ||
INFINEON TECHNOLOGIES |
22+ |
SMD |
518000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
Infineon/英飛凌 |
2022+ |
DPAK |
48000 |
只做原裝,原裝,假一罰十 |
詢價(jià) | ||
IR |
23+ |
TO252 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
Infineon Technologies |
2022+ |
TO-252-3,DPak(2 引線 + 接片 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
Infineon(英飛凌) |
2112+ |
DPAK |
115000 |
3000個/卷一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長 |
詢價(jià) | ||
IR |
23+ |
TO252 |
7000 |
詢價(jià) |
