首頁(yè)>IRFR9024>規(guī)格書詳情

IRFR9024中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRFR9024
廠商型號(hào)

IRFR9024

功能描述

Power MOSFET

文件大小

1.97285 Mbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡(jiǎn)稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-25 11:16:00

IRFR9024規(guī)格書詳情

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace mount applications.

FEATURES

? Dynamic dV/dt Rating

? Repetitive Avalanche Rated

? Surface Mount (IRFR9024/SiHFR9024)

? Straight Lead (IRFU9024/SiHFU9024)

? Available in Tape and Reel

? P-Channel

? Fast Switching

? Lead (Pb)-free Available

?

產(chǎn)品屬性

  • 型號(hào):

    IRFR9024

  • 功能描述:

    MOSFET P-Chan 60V 8.8 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
IR
2016+
TO-252
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
詢價(jià)
IR
23+
SOP
3200
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售
詢價(jià)
cet
2023+
TO-252
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
IOR
21+
TO252
12588
原裝正品,自己庫(kù)存 假一罰十
詢價(jià)
IR
22+23+
TO252
9170
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
INTERNATIONALRECTIFIER
2020+
NA
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
詢價(jià)
IRFR9024
1155
1155
詢價(jià)
IRF
24+
TO-252
2560
絕對(duì)原裝!現(xiàn)貨熱賣!
詢價(jià)
IR
19+
TO-252
75053
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價(jià)
IR
三年內(nèi)
TO252
1983
只做原裝正品
詢價(jià)