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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRFR9024	文件：379.2 Kbytes Page：6 Pages	P-Channel Enhancement Mode Field Effect Transistor GeneralDescription ThisP-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableR	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFR9024	文件：1.97285 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9024	文件：173.92 Kbytes Page：6 Pages	Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-8.8A) Description ThirdGenerationHEXFETsMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9024) ?St	IRF International Rectifier	IRF
IRFR9024	文件：4.48925 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024	文件：4.48925 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024	文件：5.21397 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024	文件：1.24375 Mbytes Page：13 Pages	Power MOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9024,SiHFR9024) ?Straightlead(IRFU9024,SiHFU9024) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9024	文件：1.69025 Mbytes Page：5 Pages	-60V P -Channel Enhancement Mode MOSFET GeneralFeatures Vps=-60VIp=-20A Robson)	UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司	UMW
IRFR9024	文件：1.50124 Mbytes Page：5 Pages	60V P-Channel Enhancement Mode MOSFET GeneralFeatures Vos=-60VIp=-20A Ros(on)	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體	EVVOSEMI
IRFR9024	文件：321.91 Kbytes Page：2 Pages	isc P-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR9024	文件：1.1361 Mbytes Page：11 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9024	文件：4.49216 Mbytes Page：7 Pages	Power MOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024_V01	文件：1.24375 Mbytes Page：13 Pages	Power MOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9024,SiHFR9024) ?Straightlead(IRFU9024,SiHFU9024) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9024NCPBF	文件：1.34872 Mbytes Page：10 Pages	HEXFET POWER MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRFR9024NCPBF	文件：5.56784 Mbytes Page：10 Pages	HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024NCPBF	文件：5.33157 Mbytes Page：10 Pages	ULTRA LOW ON-RESISTANCE Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024NPBF	文件：1.38867 Mbytes Page：11 Pages	HEXFET POWER MOSFET ( VDSS = -55V , RDS(on) = 0.175廓 , ID = -11A ) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRFR9024NPBF	文件：5.00536 Mbytes Page：10 Pages	ULTRA LOW ON-ORSISTANCE Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024NPBF	文件：5.00517 Mbytes Page：10 Pages	ULTRA LOW ON-RESISTANCE Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024NPBF	文件：1.38963 Mbytes Page：11 Pages	Ultra Low On-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF

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詳細(xì)參數(shù)

型號(hào)：
IRFR9024
功能描述：
MOSFET P-Chan 60V 8.8 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
柒號(hào)芯城電子商務(wù)(深圳)有限公司	IRFR9024	IR	2024+	N/A	70000	柒號(hào)只做原裝現(xiàn)貨價(jià)秒殺全網(wǎng)	詢價(jià)
深圳市勤思達(dá)科技有限公司	IRFR9024	IR	24+	TO-252	6000	全新原裝正品，歡迎咨詢！	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IRFR9024	IR	24+	TO-252	2500		詢價(jià)
深圳市星佑電子有限公司	IRFR9024	IR	05+	TO-252	15000	原裝進(jìn)口	詢價(jià)
深圳市昌和盛利電子有限公司	IRFR9024	IR	23+	TO-252	35890		詢價(jià)
深圳市博浩通科技有限公司	IRFR9024	VISHAY	23+	DPak(TO252AA)	7750	全新原裝優(yōu)勢(shì)	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	IRFR9024	IR	2016+	TO-252	6528	房間原裝進(jìn)口現(xiàn)貨假一賠十	詢價(jià)
深圳市弘為電子有限公司	IRFR9024	IR	16+	原廠封裝	3000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市佳鑫美電子科技有限公司	IRFR9024	IRF	24+	TO-252	2560	絕對(duì)原裝!現(xiàn)貨熱賣!	詢價(jià)
深圳市海天鴻電子科技有限公司	IRFR9024	IR	1650+	DPAK	8660	只做原裝進(jìn)口,假一罰十	詢價(jià)

更多IRFR9024供應(yīng)商更新時(shí)間2024-12-24 14:08:00

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