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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRFR9210TRPBF	文件：1.5825 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9210TRPBFA	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210TRPBFA	文件：4.46201 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210TRPBFA	文件：4.45842 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210TRPBFA	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210TRPBFA	文件：888.74 Kbytes Page：13 Pages	Power MOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9210,SiHFR9210) ?Straightlead(IRFU9210,SiHFU9210) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9210TRPBF-BE3	文件：888.74 Kbytes Page：13 Pages	Power MOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9210,SiHFR9210) ?Straightlead(IRFU9210,SiHFU9210) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9210TRPBFA	文件：891.33 Kbytes Page：13 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9210TRPBF-BE3	文件：891.33 Kbytes Page：13 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU9210	文件：172.29 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-1.9A) DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD-	IRF International Rectifier	IRF
IRFU9210	文件：1.5825 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU9210	文件：4.46201 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9210	文件：4.09862 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9210	文件：4.45842 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9210	文件：888.74 Kbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9210,SiHFR9210) ?Straightlead(IRFU9210,SiHFU9210) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU9210	文件：4.09862 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9210PBF	文件：1.5825 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU9210PBF	文件：1.78818 Mbytes Page：10 Pages	HEXFETPOWERMOSFET(VDSS=-200V,RDS(on)=3.0廓,ID=-1.9A)	IRF International Rectifier	IRF
IRFU9210PBF	文件：4.09862 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9210PBF	文件：4.09862 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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詳細(xì)參數(shù)

型號(hào)：
IRFR9210TRPBF
功能描述：
MOSFET P-Chan 200V 1.9 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市金華微盛電子有限公司	IRFR9210TRPBF	VISHAY	19+	TO-252	16318		詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	IRFR9210TRPBF	Vishay Siliconix	24+	D-Pak	30000	晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品	詢價(jià)
深圳市芯祺盛科技有限公司	IRFR9210TRPBF	VISHAY	10+	TO-252	10000	只做全新原裝IR正品現(xiàn)貨	詢價(jià)
深圳市坤融電子科技有限公司	IRFR9210TRPBF	IR	24+	TO-252	5000	只做原廠渠道可追溯貨源	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	IRFR9210TRPBF	VISHAY/威世	2021+	TO-252	9000	原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)	詢價(jià)
深圳市硅宇電子有限公司	IRFR9210TRPBF	Vishay(威世)	2249+		60932	二十余載金牌老企研究所優(yōu)秀合供單位您的原廠窗口	詢價(jià)
深圳市高捷芯城科技有限公司	IRFR9210TRPBF	VISHAY(威世)	23+	TO-252	9203	支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。	詢價(jià)
柒號(hào)芯城電子商務(wù)(深圳)有限公司	IRFR9210TRPBF	VISHAY	2024+	N/A	70000	柒號(hào)只做原裝現(xiàn)貨價(jià)秒殺全網(wǎng)	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IRFR9210TRPBF	VishayIR	24+	TO-252	7500		詢價(jià)
深圳市達(dá)恩科技有限公司	IRFR9210TRPBF	Vishay	18+	NA	3764	進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190	詢價(jià)

更多IRFR9210TRPBF供應(yīng)商更新時(shí)間2024-12-24 10:20:00

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