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FB41N15D

PowerMOSFET(Vdss=150V,Rds(on)max=0.045ohm,Id=41A)

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IIRFB41N15D

N-ChannelMOSFETTransistor

?DESCRITION ?HighfrequencyDC-DCconverters ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤45m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB41N15D

PowerMOSFET(Vdss=150V,Rds(on)max=0.045ohm,Id=41A)

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB41N15D

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB41N15D

N-ChannelMOSFETTransistor

?DESCRITION ?HighfrequencyDC-DCconverters ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤45m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB41N15DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB41N15DPBF

HighfrequencyDC-DCconverters

Benefits ●LowGate-to-DrainChargetoReduce ??SwitchingLosses ●FullyCharacterizedCapacitanceIncluding ??EffectiveCOSStoSimplifyDesign,(SeeApp. ??NoteAN1001) ●FullyCharacterizedAvalancheVoltage ??andCurrent ●Lead-Free Applications ●HighfrequencyDC-DCconverters

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFB41N15DPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

IRF

International Rectifier

IRFIB41N15D

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFIB41N15D

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IRFS41N15DTRLP

  • 功能描述：

    MOSFET MOSFT 150V 41A 45mOhm 72nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
15+
原廠原裝
1600
進(jìn)口原裝現(xiàn)貨假一賠十
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INFINEON/英飛凌
24+
TO-263
200
只做原廠渠道 可追溯貨源
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Infineon(英飛凌)
23+
D2PAK
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
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IR
24+
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501392
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DISCRETE
800
IR
1600
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IOR
2020+
TO-263
248
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IR
23+
TO-263
11846
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IR
2020+
TO-263
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
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Infineon Technologies
21+
D2PAK
3200
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IR
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30000
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更多IRFS41N15DTRLP供應(yīng)商 更新時(shí)間2025-1-23 14:06:00

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