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IRFS4227PBF

Advanced Process Technology

Description ThisHEXFETPowerMOSFETisspecificallydesignedforSustain,EnergyRecovery&PassswitchapplicationsinPlasmaDisplayPanels. Features ●AdvancedProcessTechnology ●KeyParametersOptimizedforPDPSustain, EnergyRecoveryandPassSwitchApplications ●LowEPULSE

IRF

International Rectifier

IRFS4227PBF

PDP SWITCH

Description ThisHEXFETPowerMOSFETisspecificallydesignedforSustain,EnergyRecovery&PassswitchapplicationsinPlasmaDisplayPanels. Features ●AdvancedProcessTechnology ●KeyParametersOptimizedforPDPSustain, EnergyRecoveryandPassSwitchApplications ●LowEPULSE

IRF

International Rectifier

IRFS4227PBF

Advanced Process Technology

IRF

International Rectifier

IRFS4227PBF_15

Advanced Process Technology

IRF

International Rectifier

IRFS4227TRLPBF

AdvancedProcessTechnology

Description ThisHEXFETPowerMOSFETisspecificallydesignedforSustain,EnergyRecovery&PassswitchapplicationsinPlasmaDisplayPanels. Features ●AdvancedProcessTechnology ●KeyParametersOptimizedforPDPSustain, EnergyRecoveryandPassSwitchApplications ●LowEPULSE

IRF

International Rectifier

IRFSL4227

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFSL4227PBF

AdvancedProcessTechnology

Description ThisHEXFETPowerMOSFETisspecificallydesignedforSustain,EnergyRecovery&PassswitchapplicationsinPlasmaDisplayPanels. Features ●AdvancedProcessTechnology ●KeyParametersOptimizedforPDPSustain, EnergyRecoveryandPassSwitchApplications ●LowEPULSE

IRF

International Rectifier

LA4227

AudioOutputforRadioCassetteRecorders3W?2chPowerAmplifier

Overview LA4227isa3W2-channelpoweramplifier.ThisICrequiresfewexternalcomponentsandisidealforpoweramplifierusedforradiocassetteplayers/recorders. Functions ?3W×2channel(VCC=9V,RL=3?) ?Standbyswitchonchip ?Thermalshutdownprotectoronchip

SANYOSanyo Semicon Device

三洋三洋電機株式會社

LTC4227

DualIdealDiode-ORandSingleHotSwapControllerwithCurrentMonitor

LINERLinear Technology

凌力爾特凌特半導體

LTC4227

WideOperatingRangeDualHotSwapControllerFastResponseLimitsPeakFaultCurrent

LINERLinear Technology

凌力爾特凌特半導體

詳細參數(shù)

  • 型號：

    IRFS4227PBF

  • 功能描述：

    MOSFET 200V 1 N-CH HEXFET PWR MOSFET 26mOhms

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
19+
D2-PAK
8974
詢價
IR
24+
TO-263
19
只做原廠渠道 可追溯貨源
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
2015+
D2-Pak
12500
全新原裝,現(xiàn)貨庫存長期供應
 詢價
IR
23+
D2PAK
9365
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
IR
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
 詢價
IR
24+
D2-Pak
8866
詢價
IR
2020+
D2-PAK
350000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
Infineon
24+
NA
3000
進口原裝正品優(yōu)勢供應
 詢價
IR
1816+
5
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價
更多IRFS4227PBF供應商 更新時間2025-4-26 15:08:00

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