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IRFSL4227PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRFSL4227PBF
廠商型號

IRFSL4227PBF

功能描述

Advanced Process Technology

文件大小

363.33 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-3 18:08:00

IRFSL4227PBF規(guī)格書詳情

Description

This HEXFET Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch applications in Plasma Display Panels.

Features

● Advanced Process Technology

● Key Parameters Optimized for PDP Sustain,

Energy Recovery and Pass Switch Applications

● Low EPULSE Rating to Reduce Power

Dissipation in PDP Sustain, Energy Recovery

and Pass Switch Applications

● Low QG for Fast Response

● High Repetitive Peak Current Capability for

Reliable Operation

● Short Fall & Rise Times for Fast Switching

●175°C Operating Junction Temperature for

Improved Ruggedness

● Repetitive Avalanche Capability for Robustness

and Reliability

產(chǎn)品屬性

  • 型號:

    IRFSL4227PBF

  • 功能描述:

    MOSFET MOSFT 200V 65A 26mOhm 70nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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