首頁 >IRFB41N15D>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

IRFB41N15D

Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB41N15D

HEXFET Power MOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB41N15D

N-Channel MOSFET Transistor

?DESCRITION ?HighfrequencyDC-DCconverters ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤45m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFB41N15DPBF

HEXFET Power MOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

IRF

International Rectifier

IRFB41N15DPBF

High frequency DC-DC converters

Benefits ●LowGate-to-DrainChargetoReduce ??SwitchingLosses ●FullyCharacterizedCapacitanceIncluding ??EffectiveCOSStoSimplifyDesign,(SeeApp. ??NoteAN1001) ●FullyCharacterizedAvalancheVoltage ??andCurrent ●Lead-Free Applications ●HighfrequencyDC-DCconverters

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFB41N15DPBF

High frequency DC-DC converters

IRF

International Rectifier

IRFB41N15DPBF_15

High frequency DC-DC converters

IRF

International Rectifier

IRFIB41N15D

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFIB41N15D

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFIB41N15DPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFB41N15D

  • 功能描述：

    MOSFET N-CH 150V 41A TO-220AB

  • RoHS：

    否

  • 類別：

    分離式半導體產(chǎn)品 >> FET - 單

  • 系列：

    HEXFET®

  • 標準包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應商設備封裝：

    TO-220FP

  • 包裝：

    管件

供應商型號品牌批號封裝庫存備注價格
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
04+
TO-220
1000
全新原裝 絕對有貨
 詢價
IR
2015+
TO-220AB
12500
全新原裝,現(xiàn)貨庫存長期供應
 詢價
IR
24+
TO-220AB
8866
詢價
IR
24+
原廠封裝
244
原裝現(xiàn)貨假一罰十
 詢價
IR
23+
TO-220
35890
詢價
IR
23+
TO-220AB
7600
全新原裝現(xiàn)貨
 詢價
ir
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
FAIRCHILD
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價
FAIRCHILD
2020+
TO-220
350000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
更多IRFB41N15D供應商 更新時間2025-2-3 13:00:00

相關規(guī)格書

更多

相關庫存

更多