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零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFU9210	文件：172.29 Kbytes Page：6 Pages	Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A) DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD-	IRF International Rectifier	IRF
IRFU9210	文件：1.5825 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU9210	文件：4.46201 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9210	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9210	文件：4.45842 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9210	文件：888.74 Kbytes Page：13 Pages	Power MOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9210,SiHFR9210) ?Straightlead(IRFU9210,SiHFU9210) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU9210	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9210PBF	文件：1.5825 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU9210PBF	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9210PBF	文件：4.09862 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9210PBF	文件：888.74 Kbytes Page：13 Pages	Power MOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9210,SiHFR9210) ?Straightlead(IRFU9210,SiHFU9210) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU9210PBF	文件：4.45842 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9210PBF	文件：4.46201 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9210PBF	文件：891.33 Kbytes Page：13 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU9210PBF	文件：1.78818 Mbytes Page：10 Pages	HEXFET POWER MOSFET ( VDSS = -200V , RDS(on) = 3.0廓 , ID = -1.9A )	IRF International Rectifier	IRF

詳細(xì)參數(shù)

型號(hào)：
IRFU9210
功能描述：
MOSFET P-Chan 200V 1.9 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市芯祺盛科技有限公司	IRFU9210	IR	01+	TO-251	35000	主營IR可含稅只做全新原裝正品現(xiàn)貨	詢價(jià)
深圳市明嘉萊科技有限公司	IRFU9210	IR	24+	TO 251	161109	明嘉萊只做原裝正品現(xiàn)貨	詢價(jià)
深圳市昌和盛利電子有限公司	IRFU9210	IR	23+	TO-251	35890		詢價(jià)
綠盛電子(香港)有限公司	IRFU9210	IR	2015+	SOP/DIP	19889	一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!	詢價(jià)
深圳市星佑電子有限公司	IRFU9210	IR	06+	TO-251	12000	原裝	詢價(jià)
深圳市博浩通科技有限公司	IRFU9210	IR	23+	原廠原裝	6000	全新原裝	詢價(jià)
深圳市永貝爾科技有限公司	IRFU9210	IRF	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市華來深電子有限公司	IRFU9210	IR	23+	TO-251	11846	一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢價(jià)
深圳市振宏微科技有限公司	IRFU9210	INTERNATIONA	23+	IPAK	9888	專做原裝正品,假一罰百!	詢價(jià)
深圳誠思涵科技有限公司	IRFU9210	IR	17+	TO-251	60000	保證進(jìn)口原裝可開17%增值稅發(fā)票	詢價(jià)

更多IRFU9210供應(yīng)商更新時(shí)間2024-11-16 12:12:00

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