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IRFS23N20DTRLP

High frequency DC-DC converters

IRF

International Rectifier

FMM23N20

2.3A20VN-ChannelEnhancement-ModeMOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRFB23N20D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB23N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.10ohm,Id=24A)

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB23N20DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB23N20DPBF

SMPSMOSFET

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFS23N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.10ohm,Id=24A)

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFS23N20DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFS23N20DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFS23N20DPBF

SMPSMOSFET

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFSL23N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.10ohm,Id=24A)

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFSL23N20D

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFSL23N20DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFSL23N20DPBF

SMPSMOSFET

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

MS23N20Z

N-Channel20V(D-S)MOSFET

BWTECH

Bruckewell Technology LTD

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFS23N20DTRLP

  • 功能描述：

    MOSFET MOSFT 200V 24A 100mOhm 57nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
13+
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1880
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8357
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23+
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IR
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IR
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International Rectifier
2022+
1
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Infineon Technologies
21+
D2PAK
800
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Infineon
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N/A
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TO263
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更多IRFS23N20DTRLP供應(yīng)商 更新時(shí)間2024-12-24 10:01:00

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