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IRFR9024NPBF中文資料KERSEMI數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRFR9024NPBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Ultra Low On-Resistance
● P-Channel
● Surface Mount (IRFR9024N)
● Straight Lead (IRFU9024N)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號(hào)：
IRFR9024NPBF
- 功能描述：
MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
TO-252 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
22+ |
TO-252 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
IR |
24+ |
TO-252 |
10000 |
全新原裝現(xiàn)貨庫存 |
詢價(jià) | ||
IR |
17+ |
NA |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
24+ |
65230 |
詢價(jià) | ||||
Infineon |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
ir |
24+ |
500000 |
行業(yè)低價(jià),代理渠道 |
詢價(jià) | |||
INFINEON/英飛凌 |
23+ |
TO-252 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價(jià) | ||
IR/infineon |
22+ |
TO-252 |
500000 |
P溝道場(chǎng)效應(yīng)管-55V,0.175mO,-8.8A,38W |
詢價(jià) | ||
INFINEON/英飛凌 |
21+ |
TO-252 |
885 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) |
