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IRFR9024NTR中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRFR9024NTR規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
? Ultra Low On-Resistance
? P-Channel
? Surface Mount (IRFR9024N)
? Straight Lead (IRFU9024N)
? Advanced Process Technology
? Fast Switching
? Fully Avalanche Rated
產(chǎn)品屬性
- 型號(hào)：
IRFR9024NTR
- 功能描述：
MOSFET MOSFET, P-CHANNEL, -55V, 11A, 175 mOhm, 12.7 nC Qg, D-Pak
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
4380 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票 |
詢價(jià) | ||
IR |
2016+ |
SOT252 |
2500 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢價(jià) | ||
INFINEON/英飛凌 |
2020+ |
NA |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
IR |
24+ |
TO-252 |
36500 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | ||
IR |
22+23+ |
TO252 |
34083 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
IR |
TO-252 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
24+ |
TO-252 |
36800 |
詢價(jià) | |||
IR |
22+ |
TO252 |
30709 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
NA |
19+ |
75052 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價(jià) | |||
IR |
22+ |
SOT252 |
9000 |
原裝正品 |
詢價(jià) |
