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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRFR9024NTRPBF	文件：1.38963 Mbytes Page：11 Pages	Advanced Process Technology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRFR9024NTRPBF	文件：1.02804 Mbytes Page：8 Pages	P-Channel 60-V (D-S) MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
IRFR9024PBF	文件：1.17972 Mbytes Page：10 Pages	HEXFETPOWERMOSFET(VDSS=-60V,RDS(on)=0.28廓,ID=-8.8A) Description ThirdGenerationHEXFETsMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9024) ?Stra	IRF International Rectifier	IRF
IRFR9024PBF	文件：1.97285 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9024PBF	文件：5.21397 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024PBF	文件：4.48925 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024PBF	文件：4.49216 Mbytes Page：7 Pages	PowerMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024PBF	文件：1.24375 Mbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9024,SiHFR9024) ?Straightlead(IRFU9024,SiHFU9024) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9024TR	文件：5.21397 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024TR	文件：1.97285 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9024TRA	文件：4.49216 Mbytes Page：7 Pages	PowerMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024TRA	文件：4.48925 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024TRL	文件：1.97285 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9024TRL	文件：5.21397 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024TRLA	文件：4.48925 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024TRLA	文件：4.49216 Mbytes Page：7 Pages	PowerMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024TRLBF	文件：5.21397 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024TRLPBF	文件：1.97285 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9024TRLPBFA	文件：4.49216 Mbytes Page：7 Pages	PowerMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9024TRLPBFA	文件：4.48925 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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詳細(xì)參數(shù)

型號(hào)：
IRFR9024NTRP
功能描述：
MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市英博爾電子有限公司	IRFR9024NTRPBF	INFINEON	23+	TO-252	10000	全新、原裝	詢價(jià)
深圳市富利微電子科技有限公司	IRFR9024NTRPBF	IR	23+	D-PAK	20540	保證進(jìn)口原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市卓越微芯電子有限公司	IRFR9024NTRPBF	IR	2020+	D-PAK	9600	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
深圳市品優(yōu)時(shí)代科技有限公司	IRFR9024NTRPBF	INFINEON/IR	1907+	NA	10000	20年老字號(hào),原裝優(yōu)勢(shì)長(zhǎng)期供貨	詢價(jià)
深圳市東來(lái)寶電子科技有限公司	IRFR9024NTRPBF	INFINEON/英飛凌	22+	TO-252	42000	鄭重承諾只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市正納電子有限公司	IRFR9024NTRPBF	INFINEON	22+	TO-220	6000	原裝正品可支持驗(yàn)貨,歡迎咨詢	詢價(jià)
深圳深宇韜電子科技有限公司	IRFR9024NTRPBF	INFINEON	22+	sot	6600	正品渠道現(xiàn)貨,終端可提供BOM表配單。	詢價(jià)
深圳市龍瀚電子有限公司	IRFR9024NTRPBF	IR	16+	TO-252	36000	原裝正品,優(yōu)勢(shì)庫(kù)存81	詢價(jià)
深圳市賽爾通科技有限公司	IRFR9024NTRPBF	IR	23+	D-PAK	65400		詢價(jià)
深圳市英科美電子有限公司	IRFR9024NTRPBF	INFINEON/英飛凌	2021+	SOT-252	18456	原裝進(jìn)口假一罰十	詢價(jià)

更多IRFR9024NTRP供應(yīng)商更新時(shí)間2024-11-4 17:30:00

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