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IRFR9024NTRPBF中文資料IRF數(shù)據手冊PDF規(guī)格書
IRFR9024NTRPBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Ultra Low On-Resistance
● P-Channel
● Surface Mount (IRFR9024N)
● Straight Lead (IRFU9024N)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產品屬性
- 型號：
IRFR9024NTRPBF
- 功能描述：
MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
TO-252 |
3000 |
正規(guī)渠道,只有原裝! |
詢價 | ||
IR |
20+ |
TO-252 |
5000 |
只做全新原裝IR正品現(xiàn)貨 |
詢價 | ||
INFINEON/英飛凌 |
21+ |
TO252 |
4144 |
優(yōu)勢現(xiàn)貨 |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務 |
詢價 | ||
INFINEON |
20+ |
TO252 |
36000 |
全新原裝 |
詢價 | ||
IR |
17+ |
D-PAK |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IR |
22+ |
原廠封裝 |
15850 |
原裝正品，實單請聯(lián)系 |
詢價 | ||
IR |
20+原裝正品 |
TO-252 |
6000 |
大量現(xiàn)貨,免費發(fā)樣。 |
詢價 | ||
INFINEON/英飛凌 |
22+ |
TO-252 |
25800 |
原裝正品支持實單 |
詢價 | ||
IR |
23+ |
D-PAK |
65400 |
詢價 |
