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IRFR9110TRL

Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-3.1A)

DESCRIPTION ThirdGnerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtec

IRF

International Rectifier

IRFR9110TRL

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導體

IRFR9110TRL

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9110TRL

Dynamic dV/dt Rating

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9110TRLA

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9110TRLA

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9110TRLPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導體

IRFR9110TRLPbFA

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9110TRLPBFA

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9110TRLPBF

Dynamic dV/dt Rating

KERSEMI

Kersemi Electronic Co., Ltd.

詳細參數(shù)

  • 型號：

    IRFR9110TRL

  • 功能描述：

    MOSFET P-Chan 100V 3.1 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
17+
TO-252
6200
詢價
IR
24+
TO-252
36800
詢價
IR
24+
TO252
5000
只做原裝公司現(xiàn)貨
 詢價
IR原裝正品現(xiàn)貨
1816+
.
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
VISHAY
1503+
TO-252
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
IR
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
21+
TO-252
10000
原裝現(xiàn)貨假一罰十
 詢價
Vishay Siliconix
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原廠渠道,現(xiàn)貨配單
 詢價
IR
2022
TO-252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
更多IRFR9110TRL供應商 更新時間2025-3-10 16:00:00

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