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IRFR9110TRL中文資料KERSEMI數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRFR9110TRL
廠商型號(hào)

IRFR9110TRL

功能描述

Power MOSFET

文件大小

3.89837 Mbytes

頁面數(shù)量

7

生產(chǎn)廠商 Kersemi Electronic Co., Ltd.
企業(yè)簡稱

KERSEMI

中文名稱

Kersemi Electronic Co., Ltd.官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-1-27 23:00:00

IRFR9110TRL規(guī)格書詳情

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU Series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace mount applications.

FEATURES

? Dynamic dV/dt Rating

? Repetitive Avalanche Rated

? Surface Mount (IRFR9110/SiHFR9110)

? Straight Lead (IRFU9110/SiHFU9110)

? Available in Tape and Reel

? P-Channel

? Fast Switching

? Lead (Pb)-free Available

產(chǎn)品屬性

  • 型號(hào):

    IRFR9110TRL

  • 功能描述:

    MOSFET P-Chan 100V 3.1 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
IR
23+
NA/
35740
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IR
2020+
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15000
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IR
24+
TO-252
65300
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IR
TO252
68900
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IR
24+
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36800
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VISHAY
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9000
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IR
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60620
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IR
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IR
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85600
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IR
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50000
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