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IRFRU130A

Advanced Power MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFS130

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFU130A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.092Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFU130A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFY130

N-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFY130

SimpleDriveRequirementsEaseofParallelingHermeticallySealed

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically

IRF

International Rectifier

IRFY130

SimpleDriveRequirements

IRF

International Rectifier

IRFY130C

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRFY130C

POWERMOSFETTHRU-HOLE(TO-257AA)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically

IRF

International Rectifier

IRFY130C

SimpleDriveRequirements

IRF

International Rectifier

IRFY130CM

POWERMOSFETN-CHANNEL(BVdss=100V,Rds(on)=0.18ohm,Id=14.4A)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically

IRF

International Rectifier

IRFY130CM

POWERMOSFETTHRU-HOLE(TO-257AA)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically

IRF

International Rectifier

IRFY130M

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRFY130M

SimpleDriveRequirementsEaseofParallelingHermeticallySealed

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically

IRF

International Rectifier

IRKT130

POWERMODULE

IRI

Information Resources, Inc. IRI

IRLR130A

AdvancedPowerMOSFET

BVDSS=100V RDS(on)=0.12? ID=13A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.101?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLR130A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLRU130A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLU130A

AdvancedPowerMOSFET

BVDSS=100V RDS(on)=0.12? ID=13A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.101?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLU130A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IR
22+
6000
終端可免費供樣,支持BOM配單
詢價
IR
23+
8000
只做原裝現(xiàn)貨
詢價
IR
23+
7000
詢價
INFINEON/英飛凌
22+
D2PAK
18000
只做全新原裝,支持BOM配單,假一罰十
詢價
IR
23+
TO-263
35890
詢價
INTERNATIONA
05+
原廠原裝
4335
只做全新原裝真實現(xiàn)貨供應(yīng)
詢價
IR
1415+
TO-263
28500
全新原裝正品,優(yōu)勢熱賣
詢價
IR
16+
原廠封裝
116
原裝現(xiàn)貨假一罰十
詢價
IR
23+
D2-Pak
8600
全新原裝現(xiàn)貨
詢價
更多IRFRU130A供應(yīng)商 更新時間2024-11-14 11:02:00