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IRFW610B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRL610

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.046? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):1.185?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRL610A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.046? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):1.185?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRL610A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRLI610A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=1.5? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?150°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRLI610A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRLS610A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRLS610A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRLW610A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=1.5? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?150°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRLW610A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    IRFW610A

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) | TO-263AB

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
24+
TO 263
155497
明嘉萊只做原裝正品現(xiàn)貨
 詢價
FSC
16+
TO-263
10000
全新原裝現(xiàn)貨
 詢價
IR
22+
TO-263
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-263
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-263
7000
詢價
FAIRCHILD/仙童
21+
TO-263
5600
原裝現(xiàn)貨假一賠十
 詢價
FAIRCHILD/仙童
21+
TO-263
6000
原裝正品
 詢價
SEC/上優(yōu)
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
SEC
21+
TO-263
10000
原裝現(xiàn)貨假一罰十
 詢價
SEC/上優(yōu)
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
更多IRFW610A供應商 更新時間2025-1-24 12:08:00

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