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IRFW630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?9.0A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical22nC) ?LowCrss(typical22pF) ?Fastswitching ?100av

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFW630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?9.0A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical22nC) ?LowCrss(typical22pF) ?Fastswitching ?100av

KERSEMI

Kersemi Electronic Co., Ltd.

IRL630

PowerMOSFET(Vdss=200V,RdS(on)=0.40ohm,Id=9.0A)

VDSS=200V RDS(on)=0.40? ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRF

International Rectifier

IRL630

PowerMOSFET

VDS(V)200V RDS(on)(Ω)VGS=5V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL630

HEXFETPowerMosfet

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRL630

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?150°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL630

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?150°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL630A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.4? ID=9A FEATURES ?Logic-LevelGateDrive ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.335?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL630A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRL630PBF

HEXFET?PowerMOSFET

VDSS=200V RDS(on)=0.40? ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFW630A

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-263AB

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
24+
TO-263
184
只做原廠渠道 可追溯貨源
 詢價
FAIRCHILD/仙童
24+
TO 263
155707
明嘉萊只做原裝正品現(xiàn)貨
 詢價
FSC
16+
TO-263
10000
全新原裝現(xiàn)貨
 詢價
FAIRCHILD/仙童
23+
TO-263
30000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
FAIRCHILD/仙童
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FAIRCHILD/仙童
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FAIRCHILD/仙童
21+
TO-263
10000
原裝現(xiàn)貨假一罰十
 詢價
FAIRCHILD/仙童
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
FAIRCHILD/仙童
22+
TO-263
6000
十年配單,只做原裝
 詢價
TH/韓國太虹
2048+
TO-263
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
更多IRFW630A供應(yīng)商 更新時間2025-1-24 13:40:00

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