IRL630中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
IRL630規(guī)格書(shū)詳情
VDS (V) 200 V
RDS(on) (Ω) VGS = 5 V 0.40
Qg (Max.) (nC) 40
Qgs (nC) 5.5
Qgd (nC) 24
Configuration Single
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Logic Level Gate Drive
? RDS(on) Specified at VGS = 4 V and 5 V
? 150 °C Operating Temperature
? Fast Switching
? Ease of Paralleling
? Lead (Pb)-free Available
產(chǎn)品屬性
- 型號(hào):
IRL630
- 功能描述:
MOSFET N-Chan 200V 9.0 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Vishay |
TO-263 |
268 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢價(jià) | |||
IR |
22+ |
TO220 |
34430 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
SEC |
589220 |
16余年資質(zhì) 絕對(duì)原盒原盤(pán) 更多數(shù)量 |
詢價(jià) | ||||
IR |
22+ |
D2-PAK |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
FAIRCHILD |
20+ |
原裝 |
65790 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
IR |
24+ |
TO-220AB |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
IR |
21+ |
TO220 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
SILICONIXVISHAY |
21+ |
NA |
5000 |
百域芯優(yōu)勢(shì) 實(shí)單必成 可開(kāi)13點(diǎn)增值稅 |
詢價(jià) | ||
Vishay |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng) |
詢價(jià) | ||
V |
23+ |
TO220AB |
10000 |
公司只做原裝正品 |
詢價(jià) |