IRFZ34S_V01中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

FEATURES

? Advanced process technology

? Surface mount

? Low-profile through-hole (IRFZ34L, SiHFZ34L)

? 175 °C operating temperature

? Fast switching

? Material categorization: for definitions of

compliance please see

www.vishay.com/doc?99912

Note?

* This datasheet provides information about parts that are?

RoHS-compliant and / or parts that are non-RoHS-compliant. For?

example, parts with lead (Pb) terminations are not RoHS-compliant.?

Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.?

The D2PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D2PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2 W in a typical surface mount application.?

The through-hole version (IRFZ34L, SiHFZ34L) is available

for low-profile applications.