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IRFZ40

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFZ40_V02

Power MOSFET

FEATURES ?DynamicdV/dtrating ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R

VishayVishay Siliconix

威世科技威世科技半導體

IRFZ40FI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.022? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCH

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IRFZ40FI

isc Silicon NPN Power Transistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?TypicalRDS(on)=0.022 ?AvalancheRuggedTechnology ?100AvalancheTested ?LowGateCharge ?HighCurrentCapability

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFZ40PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFZ40PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號:

    IRFZ40

  • 功能描述:

    MOSFET N-Chan 50V 50 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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IR
24+
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161225
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11560
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IR
23+
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35890
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IR
24+
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5825
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ST
24+
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4000
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IR
23+
TO220
51000
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IR
24+/25+
85
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IR
23+
NA
8021
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IR
87
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更多IRFZ40供應商 更新時間2025-4-26 9:16:00