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IRFZ44VZ

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A)

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRFZ44VZ

N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFZ44VZL

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A)

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRFZ44VZLPBF

HEXFET? Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A )

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom

IRF

International Rectifier

IRFZ44VZPBF

HEXFET? Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A )

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom

IRF

International Rectifier

IRFZ44VZS

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A)

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRFZ44VZSPBF

HEXFET? Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A )

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom

IRF

International Rectifier

IRFZ44VZPBF

ADVANCED PROCESS TECHNOLOGY

IRF

International Rectifier

IRFZ44VZPBF_15

ADVANCED PROCESS TECHNOLOGY

IRF

International Rectifier

IRFZ44VZS

Isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFZ44VZ

  • 功能描述：

    MOSFET N-CH 60V 57A TO-220AB

  • RoHS：

    否

  • 類別：

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列：

    HEXFET®

  • 標(biāo)準(zhǔn)包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點(diǎn)：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時(shí)的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝：

    TO-220FP

  • 包裝：

    管件

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
24+
TO-220AB
8866
詢價(jià)
IR
23+
TO-220AB
8600
全新原裝現(xiàn)貨
 詢價(jià)
IR
2015+
TO-220AB
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
 詢價(jià)
IR
24+
TO-220
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
IR
1816+
4
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
23+
TO-220-3
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
IR
18+
TO-220
41200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
IR
20+
TO-220
36900
原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票
 詢價(jià)
英飛凌
21+
TO220
6000
絕對(duì)原裝現(xiàn)貨
 詢價(jià)
更多IRFZ44VZ供應(yīng)商 更新時(shí)間2024-11-16 16:30:00

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