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IRG4BC20KDS中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRG4BC20KDS
廠商型號

IRG4BC20KDS

功能描述

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)

文件大小

222.96 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-8 20:00:00

IRG4BC20KDS規(guī)格書詳情

Short Circuit Rated UltraFast IGBT

Features

? Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10μs @ 125°C, VGE = 15V

? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation

? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

? Industry standard D2Pak package

Benefits

? Latest generation 4 IGBTs offer highest power density motor controls possible.

? HEXFRED? diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses.

? This part replaces the IRGBC20KD2-S and IRGBC20MD2-S products.

? For hints see design tip 97003.

產(chǎn)品屬性

  • 型號:

    IRG4BC20KDS

  • 制造商:

    IRF

  • 制造商全稱:

    International Rectifier

  • 功能描述:

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)

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