首頁 >IRG4BC30SS>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRG4BC30SS | INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRF International Rectifier | IRF | |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A) Features ?UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage Benefits ?Gener | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A) Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra- | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEUltraFastCoPackIGBT Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra- | IRF International Rectifier | IRF | ||
ULTRAFASTCOPACKIGBT | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
UltraFastSpeedIGBT Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage ?Lead-Free Bene | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A) Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardD2Pakpackage Benefits ?Generati | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A) Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardD2Pakpackage Benefits ?Generati | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardD2Pakpackage ?Lead-Free Benefit | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A) Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesign | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A) | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.10V,@Vge=15V,Ic=12A) Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTde | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.10V,@Vge=15V,Ic=12A) Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTde | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features ?DesignedexpresslyforSwitch-ModePower SupplyandPFC(powerfactorcorrection) applications ?Industry-benchmarkswitchinglossesimprove efficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBT | IRF International Rectifier | IRF |
詳細參數(shù)
- 型號:
IRG4BC30SS
- 制造商:
International Rectifier
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
Infineon Technologies |
22+ |
D2PAK |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
Infineon Technologies |
21+ |
D2PAK |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
Infineon Technologies |
23+ |
D2PAK |
9000 |
原裝正品,支持實單 |
詢價 | ||
IR |
23+ |
TO |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO |
7000 |
詢價 | |||
IR |
08+ |
299 |
原裝正品長期供貨,如假包賠包換 徐小姐13714450367 |
詢價 | |||
IR |
05+ |
原廠原裝 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | |||
IR |
16+ |
原廠封裝 |
137 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
23+ |
TO-263 |
6680 |
全新原裝優(yōu)勢 |
詢價 |
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相關(guān)庫存
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