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IRG4BC30SS

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC30SS_04

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

Features ?Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4BC30U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features ?UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage Benefits ?Gener

IRF

International Rectifier

IRG4BC30UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRG4BC30UD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEUltraFastCoPackIGBT

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

IRG4BC30UDPBF

ULTRAFASTCOPACKIGBT

IRF

International Rectifier

IRG4BC30UPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30UPBF

UltraFastSpeedIGBT

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage ?Lead-Free Bene

IRF

International Rectifier

IRG4BC30US

INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardD2Pakpackage Benefits ?Generati

IRF

International Rectifier

IRG4BC30U-S

INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardD2Pakpackage Benefits ?Generati

IRF

International Rectifier

IRG4BC30U-SPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardD2Pakpackage ?Lead-Free Benefit

IRF

International Rectifier

IRG4BC30W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesign

IRF

International Rectifier

IRG4BC30WPBF

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A)

IRF

International Rectifier

IRG4BC30WPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30WS

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.10V,@Vge=15V,Ic=12A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTde

IRF

International Rectifier

IRG4BC30W-S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.10V,@Vge=15V,Ic=12A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTde

IRF

International Rectifier

IRG4BC30W-SPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30W-SPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?DesignedexpresslyforSwitch-ModePower SupplyandPFC(powerfactorcorrection) applications ?Industry-benchmarkswitchinglossesimprove efficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBT

IRF

International Rectifier

詳細參數(shù)

  • 型號:

    IRG4BC30SS

  • 制造商:

    International Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
Infineon Technologies
22+
D2PAK
9000
原廠渠道,現(xiàn)貨配單
詢價
Infineon Technologies
21+
D2PAK
13880
公司只售原裝,支持實單
詢價
Infineon Technologies
23+
D2PAK
9000
原裝正品,支持實單
詢價
IR
23+
TO
8000
只做原裝現(xiàn)貨
詢價
IR
23+
TO
7000
詢價
IR
08+
299
原裝正品長期供貨,如假包賠包換 徐小姐13714450367
詢價
IR
05+
原廠原裝
851
只做全新原裝真實現(xiàn)貨供應(yīng)
詢價
IR
16+
原廠封裝
137
原裝現(xiàn)貨假一罰十
詢價
IR
23+
TO-263
6680
全新原裝優(yōu)勢
詢價
更多IRG4BC30SS供應(yīng)商 更新時間2024-11-16 9:00:00