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IRG7R313UPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRG7R313UPBF規(guī)格書詳情
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
High repetitive peak current capability
Lead Free package
產(chǎn)品屬性
- 型號：
IRG7R313UPBF
- 功能描述：
IGBT 晶體管 330V 20A 1.35V PDP
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集電極—發(fā)射極最大電壓
- VCEO：
650 V
- 集電極—射極飽和電壓：
2.3 V
- 柵極/發(fā)射極最大電壓：
20 V 在25
- C的連續(xù)集電極電流：
150 A
- 柵極—射極漏泄電流：
400 nA
- 功率耗散：
187 W
- 封裝/箱體：
TO-247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
18+ |
TO-252 |
2000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
23+ |
NA/ |
1000 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
22+ |
SOT252 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
IR |
24+ |
ROHS |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
24+ |
TO-252 |
35200 |
一級代理/放心采購 |
詢價 | ||
IR |
ROHS |
8560 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
IR |
TO-252 |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
2018+ |
TO252 |
6528 |
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心 |
詢價 | ||
IR |
19+ |
TO-252 |
75146 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價 | ||
IR |
24+ |
TO-252 |
90000 |
一級代理商進口原裝現(xiàn)貨、價格合理 |
詢價 |
