首頁 >IRGB4086PBF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRGB4086PBF | PDD TRENCH IGBT Features ?AdvancedTrenchIGBTTechnology ?OptimizedforSustainandEnergyRecoveryCircuitsinPDPApplications ?LowVCE(on)andEnergyperPulse(EPULSETM)forImprovedPanelEfficiency ?HighRepetitivePeakCurrentCapability ?LeadFreePackage | IRF International Rectifier | IRF | |
IRGB4086PBF | 包裝:管件 封裝/外殼:TO-220-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 300V 70A 160W TO220AB | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
PDPTRENCHIGBT | IRF International Rectifier | IRF | ||
PDPTRENCHIGBT Features AdvancedTrenchIGBTTechnology OptimizedforSustainandEnergyRecoveryCircuitsinPDPApplications LowVCE(on)andEnergyperPulse(EPULSE?)forImprovedPanelEfficiency HighRepetitivePeakCurrentCapability LeadFreePackage | IRF International Rectifier | IRF | ||
N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications Features ?LowON-resistance,lowinputcapacitance,ultrahigh-speedswitching. ?Highreliability(AdoptionofHVPprocess). ?AttachmentworkabilityisgoodbyMica-lesspackage. ?Avalancheresistanceguarantee. | SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會社 | SANYO | ||
DC-5GHz,CascadableInGaP/GaAsHBTMMICAmplifier ProductDescription SirenzaMicrodevices’SBA-4086isahighperformanceInGaP/GaAsHeterojunctionBipolarTransistorMMICAmplifier.ADarlingtonconfigurationdesignedwithInGaPprocesstechnologyprovidesbroadbandperformanceupto5GHzwithexcellentthermalperfomance.Theheterojunction | SIRENZA SIRENZA MICRODEVICES | SIRENZA | ||
DC-5GHz,CascadableInGaP/GaAsHBTMMICAmplifier [SirenzaMicrodevices] ProductDescription SirenzaMicrodevices’SBA-4086isahighperformanceInGaP/GaAsHeterojunctionBipolarTransistorMMICAmplifier.ADarlingtonconfigurationdesignedwithInGaPprocesstechnologyprovidesbroadbandperformanceupto5GHzwithexcellentthermalperfoma | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
DCto5GHz,CASCADABLEInGaP/GaAsHBTMMICAMPLIFIER | RFMD RF Micro Devices | RFMD | ||
DC-5GHz,CascadableInGaP/GaAsHBTMMICAmplifier ProductDescription SirenzaMicrodevices’SBA-4086isahighperformanceInGaP/GaAsHeterojunctionBipolarTransistorMMICAmplifier.ADarlingtonconfigurationdesignedwithInGaPprocesstechnologyprovidesbroadbandperformanceupto5GHzwithexcellentthermalperfomance.Theheterojunction | SIRENZA SIRENZA MICRODEVICES | SIRENZA | ||
DC-5GHz,CascadableInGaP/GaAsHBTMMICAmplifier [SirenzaMicrodevices] ProductDescription SirenzaMicrodevices’SBA-4086isahighperformanceInGaP/GaAsHeterojunctionBipolarTransistorMMICAmplifier.ADarlingtonconfigurationdesignedwithInGaPprocesstechnologyprovidesbroadbandperformanceupto5GHzwithexcellentthermalperfoma | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
DCto5GHz,CASCADABLEInGaP/GaAsHBTMMICAMPLIFIER | RFMD RF Micro Devices | RFMD | ||
DCto5GHz,CASCADABLEInGaP/GaAsHBTMMICAMPLIFIER | RFMD RF Micro Devices | RFMD | ||
DCto5GHz,CASCADABLEInGaP/GaAsHBTMMICAMPLIFIER | RFMD RF Micro Devices | RFMD |
產(chǎn)品屬性
- 產(chǎn)品編號:
IRGB4086PBF
- 制造商:
Infineon Technologies
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
管件
- IGBT 類型:
溝道
- 不同?Vge、Ic 時?Vce(on)(最大值):
2.96V @ 15V,120A
- 輸入類型:
標(biāo)準(zhǔn)
- 25°C 時 Td(開/關(guān))值:
36ns/112ns
- 測試條件:
196V,25A,10 歐姆
- 工作溫度:
-40°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3
- 供應(yīng)商器件封裝:
TO-220AB
- 描述:
IGBT 300V 70A 160W TO220AB
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
19+ |
TO-220 |
75149 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | ||
VISHAY |
24+ |
TO-220 |
12000 |
VISHAY專營進(jìn)口原裝現(xiàn)貨假一賠十 |
詢價 | ||
International Rectifier |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 | |||
INFINEON |
1503+ |
TO-220 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
IR |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
21+ |
TO-220 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Infineon Technologies |
22+ |
TO220AB |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
2022 |
TO-220 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 |
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