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IRGB430U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGB430U

Fit Rate / Equivalent Device Hours

IRF

International Rectifier

IRGB430UD2

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=15A)

Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,motorcontrol,UPSandpowers

IRF

International Rectifier

IRGB430UD2

Fit Rate / Equivalent Device Hours

IRF

International Rectifier

IRGP430U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGP430U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRK.430

SUPERMAGN-A-pak-TMPowerModules

Features ■Highcurrentcapability ■3000VRMSisolatingvoltagewithnon-toxicsubstrate ■Highsurgecapability ■Highvoltageratingsupto2000V ■Industrialstandardpackage ■ULrecognitionpending TypicalApplications ■Motorstarters ■DCmotorcontrols-ACmotorcontrols ■Unin

IRF

International Rectifier

IRK430

SUPERMAGN-A-PAK??PowerModules

IRF

International Rectifier

ISCNL430W

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=70mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXDD430

30AmpLow-SideUltrafastMOSFET/IGBTDriver

GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    IRGB430U

  • 制造商：

    IRF

  • 制造商全稱：

    International Rectifier

  • 功能描述：

    Fit Rate/Equivalent Device Hours

供應(yīng)商型號品牌批號封裝庫存備注價格
INTERNATIONA
05+
原廠原裝
4621
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
IR
23+
原廠原裝
5000
全新原裝
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
INTERNATI
24+
35200
一級代理/放心采購
 詢價
IR/VISHAY
23+
TO-220
10000
公司只做原裝正品
 詢價
IR/VISHAY
22+
TO-220
6000
十年配單,只做原裝
 詢價
IR/VISHAY
23+
TO-220
6000
原裝正品，支持實單
 詢價
IR/VISHAY
22+
TO-220
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
IR
23+
TO-220
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-220
7000
詢價
更多IRGB430U供應(yīng)商 更新時間2025-1-20 10:32:00

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