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首頁(yè) >IRGP430U>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRGP430U	文件：256.41 Kbytes Page：6 Pages	INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof	IRF International Rectifier	IRF
IRGP430U	文件：98.39 Kbytes Page：35 Pages	Fit Rate / Equivalent Device Hours	IRF International Rectifier	IRF
IRGP430UD2	文件：426.5 Kbytes Page：8 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=15A) Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,motorcontrol,UPSandpowers	IRF International Rectifier	IRF
IRK.430	文件：104.42 Kbytes Page：8 Pages	SUPERMAGN-A-pak-TMPowerModules Features ■Highcurrentcapability ■3000VRMSisolatingvoltagewithnon-toxicsubstrate ■Highsurgecapability ■Highvoltageratingsupto2000V ■Industrialstandardpackage ■ULrecognitionpending TypicalApplications ■Motorstarters ■DCmotorcontrols-ACmotorcontrols ■Unin	IRF International Rectifier	IRF
IRK430	文件：137.28 Kbytes Page：5 Pages	SUPERMAGN-A-PAK??PowerModules	IRF International Rectifier	IRF
ISCNL430W	文件：398.93 Kbytes Page：3 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=70mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXDD430	文件：781.94 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager	IXYS IXYS Corporation	IXYS
IXDD430	文件：619.61 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver	IXYS IXYS Corporation	IXYS
IXDD430CI	文件：781.94 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager	IXYS IXYS Corporation	IXYS
IXDD430CI	文件：619.61 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver	IXYS IXYS Corporation	IXYS
IXDD430MCI	文件：619.61 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver	IXYS IXYS Corporation	IXYS
IXDD430MYI	文件：619.61 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver	IXYS IXYS Corporation	IXYS
IXDD430YI	文件：781.94 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager	IXYS IXYS Corporation	IXYS
IXDD430YI	文件：619.61 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver	IXYS IXYS Corporation	IXYS
IXDI430	文件：781.94 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager	IXYS IXYS Corporation	IXYS
IXDI430	文件：619.61 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver	IXYS IXYS Corporation	IXYS
IXDI430CI	文件：781.94 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager	IXYS IXYS Corporation	IXYS
IXDI430CI	文件：619.61 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver	IXYS IXYS Corporation	IXYS
IXDI430MCI	文件：619.61 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver	IXYS IXYS Corporation	IXYS
IXDI430MYI	文件：619.61 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver	IXYS IXYS Corporation	IXYS

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詳細(xì)參數(shù)

型號(hào)：
IRGP430U
制造商：
IRF
制造商全稱：
International Rectifier
功能描述：
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A)

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市星佑電子有限公司	IRGP430U	INTERNATIONA	05+	原廠原裝	4391	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市昌和盛利電子有限公司	IRGP430U	IR	23+	TO-247	35890		詢價(jià)
深圳市利加科技有限公司	IRGP430U	IR	16+	TO-3P	10000	全新原裝現(xiàn)貨	詢價(jià)
深圳市永貝爾科技有限公司	IRGP430U	IRF	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市振宏微科技有限公司	IRGP430U	IR	23+	NA	331	專做原裝正品,假一罰百!	詢價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	IRGP430U	IR	23+	TO	10000	公司只做原裝正品	詢價(jià)
深圳市河鋒鑫科技有限公司	IRGP430U	IR	22+	TO	6000	十年配單,只做原裝	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	IRGP430U	IR	23+	TO	6000	原裝正品，支持實(shí)單	詢價(jià)
深圳市富芯樂(lè)電子科技有限公司	IRGP430U	IR	22+	NA	4500	全新原裝品牌專營(yíng)	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	IRGP430U	IR	22+	TO	25000	只做原裝進(jìn)口現(xiàn)貨,專注配單	詢價(jià)

更多IRGP430U供應(yīng)商更新時(shí)間2024-11-15 16:24:00

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