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IRGR3B60KD2

Drives1x70WHIDlamp

Overview TheIRPLHID2Areferencedesignkitconsistsofacompleteballastsolutionfora70WHIDlamp.ThedesigncontainsanEMIfilter,lowvoltagepowersupply,activepowerfactorcorrectionandaballastcontrolcircuitusingtheIRS2573D.Thisdemoboardisintendedtohelpwiththeevalua

IRF

International Rectifier

IRGR3B60KD2

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRGR3B60KD2PBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRGR3B60KD2PBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

IRGR3B60KD2PBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

IRGR3B60KD2PBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

IRGR3B60KD2TRLP

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

IRGR3B60KD2TRRP

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRGR3B60KD2TRP

  • 功能描述：

    IGBT 模塊

  • RoHS：

    否

  • 制造商：

    Infineon Technologies

  • 產(chǎn)品：

    IGBT Silicon Modules

  • 配置：

    Dual 集電極—發(fā)射極最大電壓

  • VCEO：

    600 V

  • 集電極—射極飽和電壓：

    1.95 V 在25

  • C的連續(xù)集電極電流：

    230 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    445 W

  • 最大工作溫度：

    + 125 C

  • 封裝/箱體：

    34MM

供應商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
23+
TO-252
2669
原廠訂貨渠道,支持BOM配單一站式服務
 詢價
英飛凌
新批次
N/A
1500
詢價
IR
24+
TO-252
7500
詢價
IR
13+
D-PAK
21238
原裝分銷
 詢價
IR
23+
D-PAK
7750
全新原裝優(yōu)勢
 詢價
Infineon Technologies
21+
D-Pak
2000
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營)!
 詢價
Infineon
1931+
N/A
493
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
INFINEON
1809+
TO-252
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細信息,
 詢價
INFINEON/英飛凌
21+
NA
12820
只做原裝,質(zhì)量保證
 詢價
更多IRGR3B60KD2TRP供應商 更新時間2024-12-23 14:16:00

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