IRHNA9160中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
IRHNA9160 |
| 功能描述 | TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-38A) |
| 文件大小 |
153.02 Kbytes |
| 頁面數(shù)量 |
4 頁 |
| 生產(chǎn)廠商 | International Rectifier |
| 企業(yè)簡稱 |
IRF |
| 中文名稱 | International Rectifier官網(wǎng) |
| 原廠標(biāo)識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時(shí)間 | 2025-3-25 14:03:00 |
| 人工找貨 | IRHNA9160價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
IRHNA9160規(guī)格書詳情
International Rectifier’s RADHard HEXFETTM technol ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been character ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
■ Single Event Effect (SEE) Hardened
■ Low RDS(on)
■ Low Total Gate Charge
■ Proton Tolerant
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Surface Mount
■ Ceramic Package
■ Light Weight
產(chǎn)品屬性
- 型號：
IRHNA9160
- 制造商：
International Rectifier
- 功能描述：
HIGH PERFORMANCE MOSTFET 10K RAD SMD-2 - Rail/Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
N/A |
N/A |
100 |
軍工品,原裝正品 |
詢價(jià) | ||
IR |
22+ |
SMD-2 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
24+ |
N/A |
90000 |
原廠正規(guī)渠道現(xiàn)貨、保證原裝正品價(jià)格合理 |
詢價(jià) | ||
IR |
23+ |
SMD-2 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
SMD-2 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
18+ |
原廠原裝假一賠十 |
38 |
原廠很遠(yuǎn)現(xiàn)貨很近,找現(xiàn)貨選星佑電子,原廠原裝假一賠 |
詢價(jià) | ||
IR |
24+ |
8 |
全新原裝 |
詢價(jià) | |||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IR |
23+ |
SMD-2 |
7000 |
詢價(jià) |
