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IRL1104SPBF規(guī)格書詳情
VDSS = 40V
RDS(on) = 0.008?
ID = 104A?
Description
Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
● Advanced Process Technology
● Surface Mount (IRL1104S)
● Low-profile through-hole (IRL1104L)
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Logic-Level Gate Drive
產(chǎn)品屬性
- 型號：
IRL1104SPBF
- 功能描述：
MOSFET 40V 1 N-CH HEXFET 8mOhms 45.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2020+ |
TO-263 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IR |
11+ |
TO-263 |
4999 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
2016+ |
TO-263 |
6528 |
房間原裝進口現(xiàn)貨假一賠十 |
詢價 | ||
Infineon Technologies |
23+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原裝正品，支持實單 |
詢價 | ||
IR |
23+ |
TO-263 |
7499 |
原廠原裝正品 |
詢價 | ||
IR |
23+ |
TO263 |
30000 |
代理全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
Infineon Technologies |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
21+ |
TO-263 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
23+ |
TO263 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
IR |
22+ |
TO263 |
34430 |
鄭重承諾只做原裝進口現(xiàn)貨 |
詢價 |
