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IRL2203NL

PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRL2203NLPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRL2203NLPBF

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRL2203NPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRL2203NPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRL2203NS

PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRL2203NS

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRL2203NSPBF

HEXFET?PowerMOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRL2203NSPBF

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRL2203NSPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRL2203NSTRLPBF

AdvancedProcessTechnology

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRL2203S

PowerMOSFET(Vdss=30V,Rds(on)=0.007ohm,Id=100A??

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRLI2203

PowerMOSFET(Vdss=30V,Rds(on)=0.010ohm,Id=52A??

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRLI2203G

PowerMOSFET(Vdss=30V,Rds(on)=0.010ohm,Id=52A??

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRLI2203N

HEXFETPowerMOSFET

VDSS=30VR DS(on)=0.007? ID=61A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRLI2203NPBF

HEXFETPowerMOSFET

VDSS=30VR DS(on)=0.007? ID=61A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

KSR2203

PNP(SWITCHINGAPPLICATION)

SWITCHINGAPPLICATION(BiasResistorBuiltIn) ?Switchingcircuit,Inverter,Interfacecircuit,Drivercircuit ?BuiltinbiasResistor(R1=22K?,R2=22K?) ?ComplementtoKSR1203

SamsungSamsung semiconductor

三星三星半導(dǎo)體

LP2203

CITSWITCH

CIT

CIT Relay & Switch

LP2203

200mA,DualChannelUltra-FastCMOSLDORegulator

POWERLowpower Semiconductor inc

微源半導(dǎo)體微源半導(dǎo)體股份有限公司

LTC2203

16-Bit,25Msps/10MspsADCs

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    IRL2203NHR

  • 制造商:

    International Rectifier

  • 功能描述:

    Trans MOSFET N-CH 30V 116A 3-Pin(3+Tab) TO-220AB

  • 功能描述:

    TRANS MOSFET N-CH 30V 116A 3PIN TO-220AB - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
SMD
6000
終端可免費供樣,支持BOM配單
詢價
IR
23+
SMD
8000
只做原裝現(xiàn)貨
詢價
IR
23+
SMD
7000
詢價
IR
23+
TO-262
35890
詢價
IR
24+
TO-262
5550
詢價
IR
2015+
TO-262
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
詢價
IR
23+
TO-262
7600
全新原裝現(xiàn)貨
詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
詢價
IR
23+
TO-262-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
IR
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
更多IRL2203NHR供應(yīng)商 更新時間2025-1-11 14:00:00