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IRL2910L

HEXFET POWER MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRL2910L

Isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRL2910PBF

HEXFETPOWERMOSFET(VDSS=100V,RDS(on)=0.026廓,ID=55A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRL2910PBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRL2910PBF

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

IRL2910S

HEXFETPOWERMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRL2910S

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRL2910SPBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRL2910SPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRLI2910

HEXFETPowerMOSFET

IRF

International Rectifier

IRLI2910

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLI2910PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRLI2910PBF

Logic??evelGateDrive

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRLI2910PBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

JEPMC-PL2910

ImproveEquipmentDesignEfficiencyandShortenTactTime

OMRONOmron Electronics LLC

歐姆龍歐姆龍株式會社

KUS2910

Availableasabroadrangeofresistancesandmaterialsystems

AMPHENOLAmphenol Corporation

安費諾集團(tuán)美國安費諾集團(tuán)

LTC2910

OctalPositive/NegativeVoltageMonitor

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC2910

LowVoltageSupervisorwith27SelectableThresholdsandWatchdogTimer

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC2910

36VNano-CurrentTwoInputVoltageMonitor

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC2910

OctalPositive/NegativeVoltageMonitor

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    IRL2910L

  • 功能描述:

    MOSFET N-CH 100V 55A TO-262

  • RoHS:

  • 類別:

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列:

    HEXFET®

  • 標(biāo)準(zhǔn)包裝:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金屬氧化物 FET

  • 特點:

    邏輯電平門

  • 漏極至源極電壓(Vdss):

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫歐 @ 9A,10V Id 時的

  • Vgs(th)(最大):

    4V @ 250µA 閘電荷(Qg) @

  • Vgs:

    72nC @ 10V 輸入電容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝:

    TO-220FP

  • 包裝:

    管件

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
23+
TO-262
35890
詢價
IR
2015+
TO-262
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
詢價
ir
06+
TO-262
15000
原裝庫存
詢價
IR
2016+
TO-262
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
詢價
IR
24+
TO-262
8866
詢價
IR
23+
TO-262
7600
全新原裝現(xiàn)貨
詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
詢價
IR
23+
TO-262-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
IR
20+
TO-262-3
90000
全新原裝正品/庫存充足
詢價
IR
2020+
TO-262
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
詢價
更多IRL2910L供應(yīng)商 更新時間2024-10-24 16:11:00