IRL2910L中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRL2910L規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Logic-Level Gate Drive
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
產(chǎn)品屬性
- 型號:
IRL2910L
- 功能描述:
MOSFET N-CH 100V 55A TO-262
- RoHS:
否
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
HEXFET®
- 標準包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
2023+ |
TO-262 |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
IR |
2016+ |
TO-262 |
6528 |
房間原裝進口現(xiàn)貨假一賠十 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
23+ |
NA/ |
11 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
24+ |
TO-262 |
8866 |
詢價 | |||
IR |
21+ |
TO-262 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
23+ |
TO-262 |
35890 |
詢價 | |||
IR |
23+ |
TO-262 |
7600 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
TO-262 |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
2020+ |
TO-262 |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 |