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IRLD014PBF

HEXFET Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4-pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmulti

IRF

International Rectifier

IRLD014PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertiablecasestylewhichcanbestackedinmultiplecombina

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLD014PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLL014

HEXFET?PowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin

IRF

International Rectifier

IRLL014

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLL014

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLL014

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLL014

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLL014

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLL014

55VN-ChannelMOSFET

Benefits VDS(V)=55V ID=2.0A(VGS=10V) RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    IRLD014P

  • 功能描述:

    MOSFET N-Chan 60V 1.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Vishay Siliconix
24+
4-HVMDIP
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價
IR
2020+
origina
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價
IR
22+
origina
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價
VISHAY(威世)
23+
HVMDIP
7863
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價
VISHAY(威世)
23+
N/A
23500
最新到貨,只做原裝進(jìn)口
詢價
VishayIR
24+
4-DIP
5144
詢價
VISHAY
23+
DIP2
7750
全新原裝優(yōu)勢
詢價
VISHAY
14+
HVMDIP-4(HEXDIP-4)
400
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
Vishay
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
更多IRLD014P供應(yīng)商 更新時間2025-1-20 14:14:00