IRLI630G中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRLI630G規(guī)格書詳情
VDSS = 200V
RDS(on) = 0.40?
ID = 6.2A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
● Isolated Package
● High Voltage Isolation = 2.5KVRMS
● Sink to Lead Creepage Dist. 4.8mm
● Logic-Level Gate Drive
● RDS(ON) Specified at VGS = 4V & 5V
● Fast Switching
● Ease of paralleling
產(chǎn)品屬性
- 型號：
IRLI630G
- 功能描述：
MOSFET N-Chan 200V 6.2 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
3400 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
SILICONIXVISHAY |
24+ |
NA |
1000 |
原裝現(xiàn)貨,專業(yè)配單專家 |
詢價 | ||
IR |
24+ |
TO 220F |
161237 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
SILICONIXVISHAY |
21+ |
NA |
1820 |
只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨! |
詢價 | ||
IR |
2016+ |
TO-220F |
6528 |
房間原裝進口現(xiàn)貨假一賠十 |
詢價 | ||
IR |
24+ |
TO-220F |
56000 |
公司進口原裝現(xiàn)貨 批量特價支持 |
詢價 | ||
SILICONIX (VISHAY) |
23+ |
原廠原封 |
1000 |
訂貨1周 原裝正品 |
詢價 | ||
IR |
23+ |
TO-220F |
11186 |
全新原裝 |
詢價 | ||
VISHAY |
20+ |
na |
65790 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IR |
21+ |
TO-220F |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 |
