IRLU014N中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRLU014N規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Logic-Level Gate Drive
● Surface Mount (IRLR024N)
● Straight Lead (IRLU024N)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
產(chǎn)品屬性
- 型號:
IRLU014N
- 功能描述:
MOSFET N-CH 55V 10A I-PAK
- RoHS:
否
- 類別:
分離式半導體產(chǎn)品 >> FET - 單
- 系列:
HEXFET®
- 標準包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應商設備封裝:
TO-220FP
- 包裝:
管件
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
TO-251 |
4500 |
全新原裝品牌專營 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
23+ |
I-Pak |
90000 |
只做原廠渠道價格優(yōu)勢可提供技術(shù)支持 |
詢價 | ||
VBsemi |
2219+ |
TO251 |
5502 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
IR |
2023+ |
I-PAK |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
VB |
TO-251 |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
INFINEON/英飛凌 |
24+ |
TO-251 |
56000 |
公司進口原裝現(xiàn)貨 批量特價支持 |
詢價 | ||
IR |
23+ |
TO-251 |
33078 |
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
IR |
24+ |
TO-251 |
1462 |
詢價 | |||
VBsemi |
24+ |
TO251 |
9000 |
只做原裝正品 有掛有貨 假一賠十 |
詢價 |