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IRLU014PBF中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRLU014PBF
廠商型號(hào)

IRLU014PBF

功能描述

Power MOSFET

文件大小

2.16738 Mbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡(jiǎn)稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-3 15:34:00

IRLU014PBF規(guī)格書詳情

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

FEATURES

? Dynamic dV/dt Rating

? Surface Mount (IRLR014, SiHLR014)

? Straight Lead (IRLU014, SiHLU014)

? Available in Tape and Reel

? Logic-Level Gate Drive

? RDS(on) Specified at VGS = 4 V and 5 V

? Fast Switching

? Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

產(chǎn)品屬性

  • 型號(hào):

    IRLU014PBF

  • 功能描述:

    MOSFET N-Chan 60V 7.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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