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IRLZ14S

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRLZ14S

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextermelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLZ14S

Power MOSFET

FEATURES ?Advancedprocesstechnology ?Surface-mount ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinformationaboutpartsthatare? RoHS-compliantand/orpar

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLZ14S

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLZ14S_V01

Power MOSFET

FEATURES ?Advancedprocesstechnology ?Surface-mount ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinformationaboutpartsthatare? RoHS-compliantand/orpar

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLZ14SL

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRLZ14SPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextermelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLZ14STRRPBFA

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextermelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLZ14S_11

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLZ14SPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRLZ14S

  • 功能描述：

    MOSFET N-Chan 60V 10 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO 263
161387
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
VishayIR
24+
TO-263
830
詢價(jià)
IR
1415+
TO-263
28500
全新原裝正品,優(yōu)勢(shì)熱賣
 詢價(jià)
IR
23+
TO-263
35890
詢價(jià)
IRF
23+
SOT263
9000
專業(yè)優(yōu)勢(shì)供應(yīng)
 詢價(jià)
IR
2020+
原廠封裝
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
24+
TO-263
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
 詢價(jià)
IR
2447
TO-263
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
VISHAY
1503+
TO-263
3000
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
更多IRLZ14S供應(yīng)商 更新時(shí)間2025-3-9 19:10:00

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