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IS28F020BLV

262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

262,144x8SmartVoltageBOOTBLOCKFLASHMEMORY

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

28F020

28F0202048K(256KX8)CMOSFLASHMEMORY

Intel’s28F020CMOSflashmemoryoffersthemostcost-effectiveandreliablealternativeforread/writerandomaccessnonvolatilememory.The28F020addselectricalchip-erasureandreprogrammingtofamiliarEPROMtechnology.Memorycontentscanberewritten:inatestsocket;inaPROM-programmer

IntelIntel Corporation(Integrated Electronics Corporation)

英特爾英特爾(美國(guó)科技公司)

AM28F020

2Megabit(256Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemory

GENERALDESCRIPTION TheAm28F020isa2MegabitFlashmemoryorganizedas256Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F020ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedto

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AM28F020A

2Megabit(256Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemorywithEmbeddedAlgorithms

TheAm28F020Aisa2MegabitFlashmemoryorganizedas256Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F020Aispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedtobereprogrammedande

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

CAT28F020

2MegabitCMOSFlashMemory

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

CAT28F020

2MegabitCMOSFlashMemory

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

CAT28F020

2MegabitCMOSFlashMemory

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

CAT28F020

2MegabitCMOSFlashMemory

DESCRIPTION TheCAT28F020isahighspeed256Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. FEATURES ■Fastre

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

CAT28F020

2MegabitCMOSFlashMemory

Catalyst

Catalyst Semiconductor

CAT28F020

2MegabitCMOSFlashMemory

DESCRIPTION TheCAT28F020isahighspeed256Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. FEATURES ■FastRe

Catalyst

Catalyst Semiconductor

IS28F020

262,144x8CMOSFLASHMEMORY

262,144x8CMOSFLASHMEMORY

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS28F020BL

262,144x8SmartVoltageBOOTBLOCKFLASHMEMORY

262,144x8SmartVoltageBOOTBLOCKFLASHMEMORY

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS28F020BV

262,144x8SmartVoltageBOOTBLOCKFLASHMEMORY

262,144x8SmartVoltageBOOTBLOCKFLASHMEMORY

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS28F020BVB

262,144x8SmartVoltageBOOTBLOCKFLASHMEMORY

262,144x8SmartVoltageBOOTBLOCKFLASHMEMORY

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS28F020BVT

262,144x8SmartVoltageBOOTBLOCKFLASHMEMORY

262,144x8SmartVoltageBOOTBLOCKFLASHMEMORY

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

LH28F020SU-L

2M(256K?8)FlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F020SU-N

2M(256K?8)FlashMemory

INTRODUCTION Sharp’sLH28F020SU-N2MFlashMemoryisarevolutionaryarchitecturewhichenablesthedesignoftrulymobile,highperformance,personalcomputingandcommunicationproducts.Withinnovativecapabilities,5.0Vsinglevoltageoperationsandveryhighread/writeperformance,theLH28

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

TMS28F020

LatchupImmunityof250mAonAllInput

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TMS28F020

262144BY8-BITFLASHMEMORY

TITexas Instruments

德州儀器美國(guó)德州儀器公司

詳細(xì)參數(shù)

  • 型號(hào):

    IS28F020BLV

  • 制造商:

    ISSI

  • 制造商全稱:

    Integrated Silicon Solution, Inc

  • 功能描述:

    262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY

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更多IS28F020BLV供應(yīng)商 更新時(shí)間2024-11-15 10:50:00