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IS41C16100-60TL

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41C16100-60TLI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41C16100-60K

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41C16100-60K

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41C16100-60KI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41C16100-60KI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41C16100-60KL

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41C16100-60KLI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41C16100-60T

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41C16100-60T

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41C16100-60TI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41C16100-60TI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

詳細參數(shù)

  • 型號：

    IS41C16100-60TL

  • 制造商：

    ISSI

  • 制造商全稱：

    Integrated Silicon Solution, Inc

  • 功能描述：

    1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供應商型號品牌批號封裝庫存備注價格
ISSI
24+
SOP
5000
只做原裝公司現(xiàn)貨
 詢價
ISSI
SOP
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
ISSI
23+
TSOP2-50
4709
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
ISSI
22+
SOP
8000
原裝正品支持實單
 詢價
ISSI
23+
SOP
8560
受權代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
ISSI
23+
SOP
8000
只做原裝現(xiàn)貨
 詢價
ISSI
23+
SOP
7000
詢價
ISSI
2023+
TSOP
50000
原裝現(xiàn)貨
 詢價
ISSI
23+
SSOP
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ISSI
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
更多IS41C16100-60TL供應商 更新時間2024-12-28 10:20:00

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