首頁 >IS41C16100>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IS41C16100 | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | |
IS41C16100 | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
16Mb DRAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41C16100CandIS41LV16100Care1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferacycleaccesscalledExtendedDataOut(EDO)PageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas3 | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheICSIIS41C16100SandIS41LV16100Sare1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas | ICSI Integrated Circuit Solution Inc | ICSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheICSIIS41C16100SandIS41LV16100Sare1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas | ICSI Integrated Circuit Solution Inc | ICSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheICSIIS41C16100SandIS41LV16100Sare1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas | ICSI Integrated Circuit Solution Inc | ICSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheICSIIS41C16100SandIS41LV16100Sare1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas | ICSI Integrated Circuit Solution Inc | ICSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheICSIIS41C16100SandIS41LV16100Sare1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas | ICSI Integrated Circuit Solution Inc | ICSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheICSIIS41C16100SandIS41LV16100Sare1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas | ICSI Integrated Circuit Solution Inc | ICSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheICSIIS41C16100SandIS41LV16100Sare1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas | ICSI Integrated Circuit Solution Inc | ICSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheICSIIS41C16100SandIS41LV16100Sare1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas | ICSI Integrated Circuit Solution Inc | ICSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheICSIIS41C16100SandIS41LV16100Sare1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas | ICSI Integrated Circuit Solution Inc | ICSI |
詳細參數(shù)
- 型號：
IS41C16100
- 制造商：
ISSI
- 制造商全稱：
Integrated Silicon Solution, Inc
- 功能描述：
1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ISSI |
2022 |
SOJ |
5280 |
原廠原裝正品,價格超越代理 |
詢價 | ||
24+ |
SOP |
7003 |
詢價 | ||||
INTEGRATEDSI |
05+ |
原廠原裝 |
4230 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
ISSI |
23+ |
TSOP |
35890 |
詢價 | |||
ISSI |
SOJ |
8000 |
正品原裝--自家現(xiàn)貨-實單可談 |
詢價 | |||
ISSI |
10+ |
TSOP |
9000 |
原裝現(xiàn)貨價格有優(yōu)勢量多可發(fā)貨 |
詢價 | ||
ICSI |
23+ |
SOJ |
5000 |
原裝正品,假一罰十 |
詢價 | ||
ISSI |
23+ |
SOJ |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
ISSI |
23+ |
SOP |
20000 |
原廠授權(quán)代理分銷現(xiàn)貨只做原裝正邁科技樣品支持現(xiàn)貨 |
詢價 | ||
ISSI |
2339+ |
SOJ |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 |
相關(guān)規(guī)格書
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