DESCRIPTION

The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16100S ideal for use in 16-, 32-bit wide data bus systems.

FEATURES

? Extended Data-Out (EDO) Page Mode access cycle

? TTL compatible inputs and outputs; tristate I/O

? Refresh Interval:

Refresh Mode: 1,024 cycles /16 ms

RAS-Only, CAS-before-RAS (CBR), and Hidden

Self refresh Mode - 1,024 cycles / 128ms

? JEDEC standard pinout

? Single power supply:

5V ± 10 (IS41C16100S)

3.3V ± 10 (IS41LV16100S)

? Byte Write and Byte Read operation via two CAS

? Industrail Temperature Range -40°C to 85°C