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IS41LV16100-60T中文資料北京矽成數(shù)據(jù)手冊PDF規(guī)格書
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DESCRIPTION
The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.
The Byte Write control, of upper and lower byte, makes the IS41C16100 ideal for use in 16-bit and 32-bit wide data bus systems.
FEATURES
? TTL compatible inputs and outputs; tristate I/O
? Refresh Interval:
— Auto refresh Mode: 1,024 cycles /16 ms
— RAS-Only, CAS-before-RAS (CBR), and Hidden
— Self refresh Mode - 1,024 cycles / 128ms
? JEDEC standard pinout
? Single power supply:
— 5V ± 10 (IS41C16100)
— 3.3V ± 10 (IS41LV16100)
? Byte Write and Byte Read operation via two CAS
? Industrail Temperature Range -40oC to 85oC
? Lead-free available
產(chǎn)品屬性
- 型號(hào):
IS41LV16100-60T
- 制造商:
ISSI
- 制造商全稱:
Integrated Silicon Solution, Inc
- 功能描述:
1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ISSI |
23+ |
NA/ |
43 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
ISSI |
0423+ |
TSOP44 |
945 |
詢價(jià) | |||
ISSI |
2015+ |
DIP/SMD |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
ISSI |
TSOP44 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
ISSI |
0109 |
15 |
公司優(yōu)勢庫存 熱賣中! |
詢價(jià) | |||
ISS |
23+ |
TSOP |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
ISSI |
23+ |
TSOP |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
ISSI |
23+ |
TSOP |
7000 |
詢價(jià) | |||
ISSI |
19+ |
9850 |
公司原裝現(xiàn)貨/隨時(shí)可以發(fā)貨 |
詢價(jià) | |||
ISS |
23+ |
TSOP |
55254 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) |