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IS42S16100C1-7TI

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s16MbSynchronousDRAMIS42S16100C1isorganizedasa524,288-wordx16-bitx2-bankforimprovedperformance.ThesynchronousDRAMsachievehigh-speeddatatransferusingpipelinearchitecture.Allinputsandoutputssignalsrefertotherisingedgeoftheclockinput. FEATURE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS42S16100C1-7TI

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS42S16100C1-7TI

Package:50-TSOP(0.400",10.16mm 寬);包裝:卷帶(TR) 類別:集成電路(IC) 存儲器 描述:IC DRAM 16MBIT PAR 50TSOP II

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS42S16100C1-7TI-TR

Package:50-TSOP(0.400",10.16mm 寬);包裝:卷帶(TR) 類別:集成電路(IC) 存儲器 描述:IC DRAM 16MBIT PAR 50TSOP II

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS42S16100C1-7B

512KWordsx16Bitsx2Banks(16-MBIT)SYNCHRONOUSDYNAMICRAM

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS42S16100C1-7BI

512KWordsx16Bitsx2Banks(16-MBIT)SYNCHRONOUSDYNAMICRAM

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS42S16100C1-7BL

512KWordsx16Bitsx2Banks(16-MBIT)SYNCHRONOUSDYNAMICRAM

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS42S16100C1-7BLI

512KWordsx16Bitsx2Banks(16-MBIT)SYNCHRONOUSDYNAMICRAM

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS42S16100C1-7T

512KWordsx16Bitsx2Banks(16-MBIT)SYNCHRONOUSDYNAMICRAM

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS42S16100C1-7T

512KWordsx16Bitsx2Banks(16-MBIT)SYNCHRONOUSDYNAMICRAM

DESCRIPTION ISSI’s16MbSynchronousDRAMIS42S16100C1isorganizedasa524,288-wordx16-bitx2-bankforimprovedperformance.ThesynchronousDRAMsachievehigh-speeddatatransferusingpipelinearchitecture.Allinputsandoutputssignalsrefertotherisingedgeoftheclockinput. FEATURE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS42S16100C1-7TL

512KWordsx16Bitsx2Banks(16-MBIT)SYNCHRONOUSDYNAMICRAM

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS42S16100C1-7TL

512KWordsx16Bitsx2Banks(16-MBIT)SYNCHRONOUSDYNAMICRAM

DESCRIPTION ISSI’s16MbSynchronousDRAMIS42S16100C1isorganizedasa524,288-wordx16-bitx2-bankforimprovedperformance.ThesynchronousDRAMsachievehigh-speeddatatransferusingpipelinearchitecture.Allinputsandoutputssignalsrefertotherisingedgeoftheclockinput. FEATURE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS42S16100C1-7TLI

512KWordsx16Bitsx2Banks(16-MBIT)SYNCHRONOUSDYNAMICRAM

DESCRIPTION ISSI’s16MbSynchronousDRAMIS42S16100C1isorganizedasa524,288-wordx16-bitx2-bankforimprovedperformance.ThesynchronousDRAMsachievehigh-speeddatatransferusingpipelinearchitecture.Allinputsandoutputssignalsrefertotherisingedgeoftheclockinput. FEATURE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS42S16100C1-7TLI

512KWordsx16Bitsx2Banks(16-MBIT)SYNCHRONOUSDYNAMICRAM

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IS42S16100C1-7TI

  • 制造商:

    ISSI, Integrated Silicon Solution Inc

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    卷帶(TR)

  • 存儲器類型:

    易失

  • 存儲器格式:

    DRAM

  • 技術:

    SDRAM

  • 存儲容量:

    16Mb(1M x 16)

  • 存儲器接口:

    并聯(lián)

  • 電壓 - 供電:

    3V ~ 3.6V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    50-TSOP(0.400",10.16mm 寬)

  • 供應商器件封裝:

    50-TSOP II

  • 描述:

    IC DRAM 16MBIT PAR 50TSOP II

供應商型號品牌批號封裝庫存備注價格
TI
11+
62000
原裝正品現(xiàn)貨優(yōu)勢18
詢價
ISSI
23+
50-TSOPII
39257
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
詢價
ISSI
2015+
DIP/SOP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
詢價
ISSI
23+
TSOP
35890
詢價
ISSI
23+
TSOP
9280
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價
ISSI
2339+
TSOP
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
詢價
ISSI
2016+
TSSOP
6000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
ICSI
23+
TSOP
5000
原裝正品,假一罰十
詢價
ICSI
18+
TSOP
30326
全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票
詢價
ISSI
23+
TSOP
20000
原廠原裝正品現(xiàn)貨
詢價
更多IS42S16100C1-7TI供應商 更新時間2025-1-19 13:38:00